IRFH5215TR2PBF
MOSFET N-CH 150V 5.0A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IRFH5215TR2PBF, offers a 150V drain-source voltage and a continuous drain current of 5A at 25°C ambient and 27A at 25°C case temperature. This device features a low on-resistance of 58mOhm at 16A and 10V Vgs, and a gate charge of 32nC maximum. The input capacitance (Ciss) is 1350pF maximum at 50V Vds. Packaged in an 8-VQFN exposed pad (PQFN 5x6), this MOSFET is suitable for surface mounting. Its robust performance characteristics make it applicable in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 16A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 50 V |
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