IRFH5210TR2PBF
MOSFET N-CH 100V 10A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IRFH5210TR2PBF, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 10A at ambient temperature and 55A at case temperature. This component features a low on-resistance of 14.9mOhm maximum at 33A and 10V Vgs. The device utilizes MOSFET technology and is supplied in an 8-PQFN (5x6) surface mount package, presented in cut tape. Key electrical characteristics include a gate charge of 59nC maximum at 10V Vgs and an input capacitance of 2570pF maximum at 25V Vds. This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 33A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2570 pF @ 25 V |
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