IRFH5207TRPBF
MOSFET N-CH 75V 13A/71A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRFH5207TRPBF, is an N-Channel device featuring a 75V drain-source breakdown voltage. This component offers a continuous drain current of 13A at ambient temperature and 71A at case temperature. With a low on-resistance of 9.6mOhm at 43A and 10V gate drive, it supports efficient power handling, dissipating up to 3.6W (Ta) and 105W (Tc). The device utilizes advanced MOSFET technology and is packaged in an 8-PQFN (5x6) for surface mounting. Key parameters include a gate charge of 59 nC at 10V and input capacitance of 2474 pF at 25V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2474 pF @ 25 V |