IRFH5207TR2PBF
MOSFET N-CH 75V 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5207TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 13A at 25°C ambient and 71A at 25°C case temperature. The device exhibits a low on-resistance of 9.6 mOhm at 43A and 10V, with a maximum Gate Charge (Qg) of 59 nC at 10V and Input Capacitance (Ciss) of 2474 pF at 25V. Packaged in an 8-PQFN (5x6) in Cut Tape, this MOSFET is suitable for surface mounting. Its characteristics make it applicable in power management, automotive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 43A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2474 pF @ 25 V |
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