IRFH5206TRPBF
MOSFET N-CH 60V 16A/89A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5206TRPBF is a 60V N-Channel power MOSFET designed for high-performance applications. This component features a low Rds(on) of 6.7mOhm at 50A and 10V Vgs, with a continuous drain current capability of 16A at 25°C ambient and 89A at 25°C case temperature. The device offers a maximum power dissipation of 3.6W (Ta) and 100W (Tc). Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 2490 pF at 25V. The IRFH5206TRPBF is supplied in an 8-PQFN (5x6) package for surface mounting, suitable for demanding thermal environments. This MOSFET is utilized in industries such as automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 25 V |
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