IRFH5204TRPBF
MOSFET N-CH 40V 22A/100A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFH5204TRPBF is an N-channel power MOSFET designed for high-density power applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 22A at ambient temperature and 100A at case temperature. With a maximum on-resistance (Rds On) of 4.3mOhm at 50A and 10V, it offers low conduction losses. The device supports a gate drive voltage up to 10V and has a maximum gate charge (Qg) of 65 nC. The input capacitance (Ciss) is 2460 pF at 25V. Power dissipation is rated at 3.6W (Ta) and 105W (Tc). Packaged in an 8-VQFN exposed pad (5x6), it is suitable for surface mounting. This MOSFET is utilized in industries such as automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2460 pF @ 25 V |
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