IRFH5110TRPBF
MOSFET N-CH 100V 11A/63A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5110TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 100 V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 11 A at ambient temperature and 63 A at case temperature. With a low on-resistance (Rds On) of 12.4 mOhm at 37 A and 10 V gate drive, it minimizes conduction losses. The MOSFET exhibits a maximum gate charge (Qg) of 72 nC at 10 V and an input capacitance (Ciss) of 3152 pF at 25 V. Power dissipation is rated at 3.6 W (Ta) and 114 W (Tc). The IRFH5110TRPBF is housed in an 8-PQFN (5x6) package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component is suitable for high-power automotive and industrial applications requiring robust power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3152 pF @ 25 V |