IRFH5110TR2PBF
MOSFET N-CH 100V 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IRFH5110TR2PBF, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 11A (Ta) or 63A (Tc) at 25°C. This device features a low on-resistance of 12.4mOhm at 37A and 10V, with a typical gate charge of 72nC at 10V. The input capacitance (Ciss) is specified at a maximum of 3152pF at 25V. Packaged in an 8-PQFN (5x6) surface mount configuration, this MOSFET is supplied in cut tape. Its robust performance characteristics make it suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 37A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3152 pF @ 25 V |
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