IRFH5106TRPBF
MOSFET N-CH 60V 21A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5106TRPBF is a 60V N-Channel Power MOSFET. This device features a low on-resistance of 5.6mOhm at 50A and 10V Vgs, enabling efficient power conversion. It offers a continuous drain current of 21A at ambient temperature and 100A at case temperature. The 8-PQFN (5x6) package provides a compact footprint for surface mount applications. Key parameters include a gate charge of 75 nC at 10V and input capacitance of 3090 pF at 25V. Maximum power dissipation is 3.6W (Ta) and 114W (Tc). This component is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 25 V |