IRFH5106TR2PBF
MOSFET N-CH 60V 100A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5106TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 21 A at ambient temperature (Ta) and 100 A at case temperature (Tc). The Rds On is specified at a maximum of 5.6 mOhm at 50 A and 10 V, indicating low conduction losses. With a Gate Charge (Qg) of 75 nC (max) at 10 V and an input capacitance (Ciss) of 3090 pF (max) at 25 V, it offers efficient switching characteristics. The MOSFET is housed in an 8-PQFN (5x6) package, suitable for surface mounting. This device is commonly utilized in power management, automotive, and industrial systems where robust power handling is critical. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 25 V |