IRFH5104TRPBF
MOSFET N-CH 40V 24A/100A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5110TRPBF is an N-channel power MOSFET designed for high-performance applications. This device features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 24A at 25°C ambient temperature, scaling to 100A at 25°C case temperature. The low on-resistance (Rds(on)) of 3.5mOhm at 50A and 10V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 3.6W (Ta) and 114W (Tc), it offers robust thermal performance. The PQFN (5x6) package with an exposed pad facilitates efficient heat transfer. Key parameters include a gate charge (Qg) of 80 nC at 10V and an input capacitance (Ciss) of 3120 pF at 25V. This component is suitable for use in automotive, industrial, and power management systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
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