IRFH5104TR2PBF
MOSFET N-CH 40V 24A/100A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH5184TR2PBF, offers robust performance for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 24A at ambient temperature and 100A at case temperature. With a low Rds(on) of 3.5mOhm at 50A and 10V, it minimizes conduction losses. The PQFN (5x6) package with an exposed pad ensures efficient thermal management, supporting up to 114W of power dissipation at case temperature. Key parameters include a gate charge (Qg) of 80nC at 10V and input capacitance (Ciss) of 3120pF at 25V. Operating across a wide temperature range of -55°C to 150°C, the IRFH5184TR2PBF is suitable for automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
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