IRFH5053TRPBF
MOSFET N-CH 100V 9.3A/46A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5053TRPBF is an N-channel power MOSFET designed for demanding applications. This component features a 100V drain-to-source voltage (Vdss) and supports a continuous drain current of 9.3A at ambient temperature and 46A at case temperature. The Rds On is specified at a maximum of 18mOhm at 9.3A and 10V gate drive. Key parameters include a maximum gate charge (Qg) of 36 nC at 10V and an input capacitance (Ciss) of 1510 pF at 50V. Power dissipation is rated at 3.1W (Ta) and 8.3W (Tc). The device operates across a temperature range of -55°C to 150°C and is supplied in an 8-PowerVDFN package, specifically a PQFN (5x6) single die, delivered on tape and reel. This MOSFET is suitable for use in industrial automation, power supply, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 50 V |
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