IRFH5053TR2PBF
MOSFET N-CH 100V 9.3A PQFN56Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRFH5053TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 9.3A at 25°C ambient temperature, scaling to 46A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 18mOhm at 9.3A and 10V Vgs, with a typical gate charge (Qg) of 36 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1510 pF at 50V Vds. The device utilizes advanced MOSFET technology and is housed in a PQFN (5x6) single die package for efficient thermal management and compact integration. It is suitable for use in power management, automotive, and industrial motor control sectors. The component is supplied in Cut Tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 50 V |
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