IRFH5025TRPBF
MOSFET N-CH 250V 3.8A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH5025TRPBF, is a surface-mount device designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 3.8 A at 25°C ambient temperature. The Rds On is specified at a maximum of 100 mOhm at 5.7 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 56 nC and Input Capacitance (Ciss) of 2150 pF at 50 V. The device is packaged in an 8-PQFN (5x6) and supplied on tape and reel. It offers a maximum power dissipation of 3.6 W (Ta) or 8.3 W (Tc). This MOSFET is suitable for use in power supply and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 50 V |
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