IRFH5025TR2PBF
MOSFET N-CH 250V 3.8A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFH5025TR2PBF, a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 3.8A at 25°C. The device is packaged in an 8-PQFN (5x6) surface mount configuration, supplied on cut tape. Key electrical characteristics include a maximum On-Resistance (Rds On) of 100mOhm at 5.7A and 10V, and a Gate Charge (Qg) of 56 nC at 10V. Input Capacitance (Ciss) is rated at a maximum of 2150 pF at 50V. The threshold voltage (Vgs(th)) is 5V at 150µA. This MOSFET is suitable for use in power supply, industrial automation, and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 50 V |
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