IRFH5020TR2PBF
MOSFET N-CH 200V 5.1A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFH5020TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 200V drain-source breakdown voltage and a continuous drain current capability of 5.1A at 25°C ambient. The device exhibits a maximum on-resistance of 55mOhm at 7.5A and 10V Vgs, with a specified gate charge of 54 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2290 pF. The IRFH5020TR2PBF is housed in an 8-PQFN (5x6) surface mount package, delivered in cut tape. This MOSFET is suitable for use in power supply and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 7.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 100 V |
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