IRFH5015TR2PBF
MOSFET N-CH 150V 10A 8VQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRFH5105TR2PBF, is a high-performance power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 10A at 25°C ambient temperature, scaling to 56A at 25°C case temperature. The low on-resistance (Rds On) of 31mOhm at 34A and 10V gate-source voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 50 nC maximum at 10V and an input capacitance (Ciss) of 2300 pF maximum at 50V. The IRFH5105TR2PBF utilizes N-Channel MOSFET technology and is housed in an 8-PQFN (5x6) surface mount package, supplied in cut tape. This device finds application in power management, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 34A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
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