IRFH5010TRPBF
MOSFET N-CH 100V 13A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5010TRPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C ambient temperature, scaling to 100A at 25°C case temperature. The Rds On is specified at a low 9mOhm at 50A and 10V gate drive. With a maximum power dissipation of 3.6W (ambient) and 250W (case), it is suitable for demanding thermal management scenarios. Key parameters include a gate charge (Qg) of 98nC at 10V and input capacitance (Ciss) of 4340pF at 25V. The device operates within a temperature range of -55°C to 150°C and is supplied in an 8-PQFN (5x6) package, presented on Tape & Reel. This MOSFET is commonly employed in industrial power supplies, automotive systems, and electric vehicle charging infrastructure.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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