IRFH5010TR2PBF
MOSFET N-CH 100V 13A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5010TR2PBF is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 100 V and supports a continuous drain current (Id) of 13A at ambient temperature and 100A at case temperature. The device exhibits a low on-resistance (Rds On) of 9mOhm at 50A and 10V, ensuring minimal conduction losses. With a gate charge (Qg) of 98 nC at 10V and input capacitance (Ciss) of 4340 pF at 25V, it is suitable for demanding switching frequencies. The IRFH5010TR2PBF is housed in an 8-PQFN (5x6) surface-mount package, commonly found in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |