IRFH5007TRPBF
MOSFET N-CH 75V 17A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5007TRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 75V drain-to-source voltage (Vdss) and supports a continuous drain current of 17A at ambient temperature and 100A at case temperature. With a low on-resistance (Rds On) of 5.9mOhm at 50A and 10V gate-source voltage, it minimizes conduction losses. The device offers a maximum power dissipation of 3.6W (Ta) and 156W (Tc). Operating across a temperature range of -55°C to 150°C, it is housed in an 8-PQFN (5x6) surface-mount package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 98 nC (max) at 10V and input capacitance (Ciss) of 4290 pF (max) at 25V. This MOSFET is suitable for use in various industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4290 pF @ 25 V |
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