IRFH5007TR2PBF
MOSFET N-CH 75V 17A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5007TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 75 V and supports a continuous drain current (Id) of 17 A at 25°C ambient temperature, scaling to 100 A at 25°C case temperature. With a low on-resistance (Rds On) of 5.9 mOhm at 50 A and 10 V Vgs, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 98 nC maximum at 10 V and displays input capacitance (Ciss) of 4290 pF maximum at 25 V. Mounted via surface mount technology in an 8-PQFN (5x6) package, this MOSFET is suitable for demanding power management solutions in industries such as automotive and industrial automation. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4290 pF @ 25 V |
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