IRFH5006TRPBF
MOSFET N-CH 60V 21A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFH5006TRPBF is an N-Channel power MOSFET designed for high-efficiency power management applications. This component features a 60V drain-source breakdown voltage and supports continuous drain currents of 21A at ambient temperature and 100A at case temperature. With a low Rds(on) of 4.1mOhm at 50A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 3.6W (Ta) and 156W (Tc), enabling robust thermal performance. Key parameters include a gate charge of 100 nC (max) and input capacitance of 4175 pF (max), facilitating efficient switching. The IRFH5006TRPBF is housed in an 8-PQFN (5x6) package for surface mounting, suitable for demanding environments across automotive, industrial, and telecommunications sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4175 pF @ 30 V |