IRFH5006TR2PBF
MOSFET N-CH 60V 100A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH5006TR2PBF is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 21A at ambient temperature (Ta) and 100A at case temperature (Tc). The low on-resistance (Rds On) of 4.1mOhm at 50A and 10V ensures efficient power delivery.
The device is housed in an 8-PQFN (5x6) package, suitable for surface mounting in compact designs. Key electrical characteristics include input capacitance (Ciss) of 4175pF (max) at 30V and gate charge (Qg) of 100nC (max) at 10V. The IRFH5006TR2PBF is utilized across industries such as automotive, industrial power control, and high-end computing, where robust power management is critical. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4175 pF @ 30 V |
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