IRFH5004TRPBF
MOSFET N-CH 40V 28A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH5004TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and offers continuous drain current capabilities of 28A at 25°C ambient and 100A at 25°C case temperature. The low on-resistance (Rds On) is rated at 2.6mOhm maximum at 50A and 10V gate drive. With a maximum gate charge (Qg) of 110nC at 10V, it ensures efficient switching. The device dissipates up to 3.6W (Ta) or 156W (Tc) and operates within a temperature range of -55°C to 150°C. Packaged in an 8-PQFN (5x6) footprint on tape and reel, this MOSFET is suitable for high-power automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4490 pF @ 20 V |
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