IRFH5004TR2PBF
MOSFET N-CH 40V 28A 8VQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRFH5004TR2PBF is an N-Channel MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current capability of 28A at ambient temperature and 100A at case temperature. With a low on-resistance (Rds On) of 2.6mOhm at 50A and 10V, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 110 nC (max) at 10V and an input capacitance (Ciss) of 4490 pF (max) at 20V. The IRFH5004TR2PBF is supplied in an 8-PQFN (5x6) package, suitable for surface mounting. This MOSFET is utilized in various industrial sectors, including automotive and power management systems, where efficient power switching is critical. The component is available in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4490 pF @ 20 V |
Request a Quote
Clients Also Buy
BSZ021N04LS6ATMA1
MOSFET N-CH 40V 25A/40A TSDSON
SPA11N65C3XKSA1
MOSFET N-CH 650V 11A TO220-FP
IPP082N10NF2SAKMA1
TRENCH >=100V
