IRFH4226TRPBF
MOSFET N-CH 25V 30A/70A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™, HEXFET® N-Channel Power MOSFET, part number IRFH4226TRPBF, features a 25V Drain-Source voltage and high continuous drain current capabilities of 30A (ambient) and 70A (case). This device offers low on-resistance of 2.4 mOhm at 30A and 10V gate-source voltage. Designed for efficient power management, it boasts a maximum power dissipation of 3.4W (ambient) and 46W (case). The N-Channel MOSFET is housed in an 8-PQFN (5x6) package, suitable for surface mounting and supplied in tape and reel. Key characteristics include a maximum gate charge of 32 nC at 10V and input capacitance of 2000 pF at 13V. Operating temperature range is -55°C to 150°C. This component is utilized in demanding applications across automotive and industrial sectors.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 13 V |
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