IRFH4213TRPBF
MOSFET N-CH 25V 41A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH4213TRPBF, features a 25V drain-source voltage and 41A continuous drain current at 25°C ambient. This device offers a low on-resistance of 1.35mOhm maximum at 50A and 10V Vgs. The IRFH4213TRPBF is packaged in an 8-PowerTDFN (PQFN 5x6) for surface mounting, with a tape and reel configuration. Key parameters include a gate charge of 54nC max at 10V Vgs and input capacitance of 3420pF max at 13V Vds. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3420 pF @ 13 V |
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