IRFH4210TRPBF
MOSFET N-CH 25V 45A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH4210TRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 25V drain-source voltage and a continuous drain current capability of 45A at 25°C ambient temperature. With a low on-resistance of 1.35mOhm maximum at 50A and 10V Vgs, it delivers efficient power switching. The device offers a thermal dissipation of 3.6W ambient and 104W case in a compact 8-PowerTDFN (5x6) PQFN package, supplied on tape and reel. Key parameters include a gate charge of 74nC maximum at 10V, input capacitance of 4812pF maximum at 13V, and a threshold voltage of 2.1V maximum. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4812 pF @ 13 V |
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