IRFH4209DTRPBF
MOSFET N-CH 25V 44A/260A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™ and HEXFET® series N-Channel MOSFET, part number IRFH4209DTRPBF. This 25 V device features low Rds(on) of 1.1mOhm at 50A and 10V Vgs, with a continuous drain current capability of 44A at 25°C ambient and 260A at 25°C case temperature. The PQFN (5x6) package offers a maximum power dissipation of 3.5W (Ta) and 125W (Tc). Key parameters include a gate charge of 74 nC at 10V and input capacitance of 4620 pF at 13V. Suitable for applications in automotive, industrial power control, and advanced computing. Operating temperature range is -55°C to 150°C. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta), 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4620 pF @ 13 V |
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