IRFH4201TRPBF
MOSFET N-CH 25V 49A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFH4201TRPBF. This 25V device features a low Rds(on) of 0.95mOhm at 10V Vgs and 50A Id. The N-Channel MOSFET is supplied in a 8-PQFN (5x6) package, suitable for surface mounting. It offers a continuous drain current of 49A (Ta) with a continuous power dissipation of 3.5W (Ta) and 156W (Tc). Key parameters include a gate charge (Qg) of 94 nC @ 10V and input capacitance (Ciss) of 6100 pF @ 13V. Operating junction temperatures range from -55°C to 150°C. This component is utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 13 V |
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