IRFH3707TRPBF
MOSFET N-CH 30V 12A/29A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFH3707TRPBF is an N-Channel Power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 12A at ambient temperature and 29A at case temperature. The low on-resistance (Rds On) of 12.4mOhm at 12A and 10V gate-source voltage, coupled with a maximum gate charge (Qg) of 8.1 nC at 4.5V, ensures high switching performance. With a maximum power dissipation of 2.8W (Ta) and a wide operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications in automotive, industrial, and telecommunications sectors. The component is supplied in a compact 8-PQFN (3x3) package, utilizing Tape & Reel packaging for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 15 V |
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