IRFH3702TRPBF
MOSFET N-CH 30V 16A/42A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFH3702TRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 16A at ambient temperature and 42A at case temperature. The low on-resistance is specified at 7.1mOhm at 16A and 10V gate-source voltage. With a maximum power dissipation of 2.8W at ambient temperature, it is suitable for thermal management considerations. Key parameters include a gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 1510 pF at 15V. The IRFH3702TRPBF is housed in an 8-PQFN (3x3) package for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds application in automotive and industrial power management solutions. The device supports drive voltages from 4.5V to 10V with a maximum gate-source voltage of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 15 V |
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