IRFH3702TR2PBF
MOSFET N-CH 30V 16A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFH3702TR2PBF is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage capacity and a continuous drain current of 16A at ambient temperature, escalating to 42A under specific thermal conditions (Tc). Its low on-resistance of 7.1 mOhm at 16A and 10V Vgs makes it efficient for power switching. The device is housed in an 8-PQFN (3x3) package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 1510 pF at 15V. The threshold voltage (Vgs(th)) is a maximum of 2.35V at 25µA. This MOSFET is utilized in automotive and industrial power management systems. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 16A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 15 V |
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