IRFCZ44VB
MOSFET 60V 55A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFCZ44VB is a high-density power MOSFET presented as a die for advanced surface mount applications. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 55A at 25°C. The on-resistance (Rds On) is specified at a maximum of 16.5mOhm when driven at 55A with a gate-source voltage (Vgs) of 10V. Designed for demanding power management solutions, this MOSFET technology is suitable for various industrial and automotive applications requiring efficient power switching. The IRFCZ44VB is supplied in bulk packaging, allowing for high-volume integration into complex electronic assemblies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 55A |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 60 V |
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