IRFC9140NB
MOSFET 100V 23A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFC9140NB is a high-performance P-channel Power MOSFET designed for demanding applications. This surface mount die offers a continuous drain current of 23A at 25°C and a drain-to-source voltage (Vdss) of 100V. With a maximum Rds(on) of 117mOhm at 23A and 10V Vgs, it ensures efficient power handling. The IRFC9140NB is suitable for use in power supplies, motor control, and industrial automation systems. This component is supplied in bulk packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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