IRFC9130NB
MOSFET 100V 14A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC9130NB is a P-channel Power MOSFET designed for demanding applications. This surface mount die offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) capability of 14A at 25°C. With a specified Rds(on) of 200mOhm at 14A and 10V Vgs, it provides efficient power switching. The technology utilizes Metal Oxide technology for reliable performance. This component is suitable for use in industrial automation, power supplies, and automotive systems where robust power management is critical. Packaged in Bulk.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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