IRFC9120NB
MOSFET 100V 6.6A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' HEXFET® IRFC9120NB is a high-performance N-channel power MOSFET designed for demanding applications. This surface-mount die offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6.6A at 25°C. Featuring a low on-resistance of 480mOhm at 6.6A and 10V Vgs, this component ensures efficient power transfer. Its robust construction and advanced MOSFET technology make it suitable for use in industrial power supplies, automotive systems, and power management solutions. The IRFC9120NB is supplied in bulk packaging for high-volume integration.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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