IRFC4019EB
MOSFET N-CH 150V 17A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFC4019EB is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This bare die component offers a 150V drain-to-source breakdown voltage and a continuous drain current capability of 17A at 25°C. Its Metal Oxide Semiconductor technology provides low on-resistance characteristics, critical for minimizing conduction losses in demanding power conversion circuits. The device is supplied in bulk packaging, intended for advanced surface mount assembly processes. Applications for this discrete MOSFET include power supplies, motor control, and other high-power switching systems within the industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 150 V |
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