IRFC3810B
MOSFET 100V 170A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC3810B is a high-performance N-channel power MOSFET in a die format, designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 170A at 25°C. The Rds(on) is specified at a maximum of 9mOhm at 170A and 10V Vgs. Engineered with advanced MOSFET technology, the IRFC3810B offers exceptional power handling capabilities and efficient switching characteristics. Its die construction is suitable for custom module integration and advanced power electronics designs. This component finds extensive use in industrial power supplies, automotive systems, and high-power motor control applications where robust performance and thermal management are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 170A |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 170A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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