IRFC3710D
MOSFET 100V 57A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC3710D is a high-performance N-channel power MOSFET, supplied as a bare die. This component offers a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 57A at 25°C. The Rds(on) is specified at a low 23mOhm when driven at 10V Vgs and 57A Id. Designed for surface mount applications, this device is suitable for demanding power conversion and control circuits across various industries, including automotive, industrial automation, and power supplies. Its robust construction and efficient switching characteristics make it a reliable choice for high-current, high-voltage applications where space optimization is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 57A |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 57A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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