IRFC3415B
MOSFET 150V 43A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC3415B is a high-performance N-channel Power MOSFET die designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 150V and a continuous drain current (Id) capability of 43A at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 42mOhm when driven at 43A with a gate-source voltage (Vgs) of 10V. Manufactured using advanced MOSFET technology, this die is suitable for surface mount integration. It finds application in various industrial sectors requiring robust power switching capabilities. The component is supplied in bulk packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 43A |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 150 V |
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