IRFC3205B
MOSFET 55V 110A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFC3205B is a high-performance N-channel Power MOSFET designed for demanding applications. This die-level component features a drain-source voltage (Vds) of 55V and a continuous drain current (Id) capability of 110A at 25°C. With a low on-resistance (Rds(on)) of 8mOhm at 110A and 10V Vgs, it minimizes conduction losses for enhanced efficiency. The surface mount die package is suitable for high-density power solutions. This MOSFET is widely utilized in automotive, industrial power control, and high-power switching applications where robust performance and thermal management are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 110A |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 55 V |
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