IRFC260NB
MOSFET 200V 50A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC260NB is a power MOSFET die designed for demanding applications. With a Drain-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) rating of 50A at 25°C, this component offers robust performance. Its low on-resistance (Rds On) of 40mOhm at 50A and 10V gate-source voltage ensures efficient power handling. The surface mount die package is suitable for high-density board designs. This MOSFET technology is commonly utilized in industrial power control, automotive electronics, and high-voltage power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 200 V |
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