IRFC230NB
MOSFET 200V 9.3A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFC230NB is a high-performance N-channel Power MOSFET designed for demanding applications. This surface mount die offers a robust 200 V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 9.3 A at 25°C. With a maximum on-resistance (Rds On) of 300 mOhms at 9.3 A and 10 V gate-source voltage, it ensures efficient power delivery. The advanced MOSFET technology provides excellent switching characteristics and thermal performance. This component is suitable for use in power supply units, motor control, and lighting applications across various industrial sectors. Packaged in bulk for high-volume integration.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 9.3A |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 200 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
