IRFC120NB
MOSFET 100V 9.4A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFC120NB is a power MOSFET die designed for high-performance applications requiring efficient switching. This N-channel MOSFET features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 9.4A at 25°C. The on-resistance (Rds On) is specified at a maximum of 210mOhm under a gate-source voltage (Vgs) of 10V and drain current of 9.4A. Supplied in a bulk package, this surface-mount die is suitable for demanding power management solutions across various industrial sectors, including power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 9.4A |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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