IRFC024NB
MOSFET 55V 17A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFC024NB is a N-channel Power MOSFET designed for demanding applications. This surface mount die offers a continuous drain current (Id) of 17A at 25°C and a drain-to-source voltage (Vdss) of 55V. The Rds On is specified at a maximum of 75mOhm at 17A and 10V Vgs. This component leverages advanced MOSFET technology for efficient power switching. The IRFC024NB is suitable for use in industrial automation, power supplies, and automotive systems where high current handling and reliable performance are critical. It is supplied in Bulk packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 55 V |
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