IRFBL3703
MOSFET N-CH 30V 260A SUPER D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFBL3703, an N-Channel HEXFET® power MOSFET. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 260A at 25°C (Tc). The IRFBL3703 offers a low on-resistance of 2.5mOhm maximum at 76A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 300W (Tc), it is suitable for demanding applications. The gate charge (Qg) is 209nC maximum at 10V Vgs, and input capacitance (Ciss) is 8250pF maximum at 25V Vds. The IRFBL3703 is housed in a SUPER D2-PAK surface mount package for efficient thermal management. This component is widely utilized in automotive, industrial, and power supply applications requiring high current switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SUPER D2-PAK |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER D2-PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V |
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