IRFBA1405P
MOSFET N-CH 55V 174A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFBA1405P is an N-Channel power MOSFET designed for high-current applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 174A at 25°C, with a maximum power dissipation of 330W (Tc). The low on-resistance of 5mOhm @ 101A, 10V ensures efficient power transfer. With a gate charge (Qg) of 260 nC @ 10V and input capacitance (Ciss) of 5480 pF @ 25V, it offers robust switching characteristics. The device is housed in a SUPER-220™ (TO-273AA) through-hole package and operates across a temperature range of -40°C to 175°C. This MOSFET is suitable for demanding power management solutions in industrial automation, electric vehicle charging, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 101A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V |
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