IRFBA1404
MOSFET N-CH 40V 206A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFBA1404 is an N-Channel Power MOSFET in a SUPER-220™ (TO-273AA) package. This component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) @ 25°C of 206 A. The on-resistance (Rds On) is a maximum of 3.7 mOhm at 95 A and 10 V gate-source voltage. Power dissipation is rated at 300 W (Tc). Key electrical parameters include input capacitance (Ciss) of 7360 pF @ 25 V and gate charge (Qg) of 200 nC @ 10 V. The device is designed for through-hole mounting and is available in tube packaging. This MOSFET is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 206A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
